Diode - Hexfred, ultrafast soft recovery, 8A, 600V
High performance, ultrafast diodes. Improve efficiency, reduce noise, allow higher frequency operation.
This diode is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the diode is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the product features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These advantages can help to significantly reduce snubbing, component count and heatsink sizes. The diode is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
| Cathode to Anode Breakdown Voltage (VBR) | 600 V | ||
| Cathode to Anode Voltage (VR) | 600 V | ||
| Forward Current, maximum (IF) | 8 A | ||
| Forward Output Current, average (IF(AV)) | 8 A | ||
| Forward Voltage, maximum (VFM) | ≤ 2.1 V, 1.4 V typical | ||
| Forward Voltage Drop @ 8 A (VF) | 1.7 V | ||
| Junction Capacitance (CJ) | 10 pF typical, ≤ 25 pF | ||
| Operating And Storage Temperature (TJ, TSTG) | -55°C to 150°C | ||
| Peak Recovery Time (tRRM) | 3.5 A | ||
| Power Dissipation, maximum @ 25°C (PD) | 36 W | ||
| Power Dissipation, maximum @ 100°C (PD) | 14 W | ||
| Repetitive Forward Current, maximum (IFRM) | 24 A | ||
| Reverse Leakage Current, maximum (IRM) | ≤ 5 μA, 0.3 μA typical | ||
| Reverse Recovery Charge (Qrr) | 65 nC | ||
| Reverse Voltage (VR) | 600 V | ||
| Series Inductance (LS) | 8.0 nH | ||
| Single Pulse Forward Current (IFSM) | 60 A | ||
| Thermal Resistance, case to heatsink (RθCS) | 0.5 K/W | ||
| Thermal Resistance, junction to ambient (RθJA) | 80 K/W | ||
| Thermal Resistance, junction to case (RθJC) | 3.5 K/W | ||
| reverse recovery time (trr) | 18 ns | ||
| Packaging Dimensions | 1.2 in. × 0.4 in. × 0.2 in. | ||
| Weight (Packaging) | 0.0044 lbs. | ||
 Specification Sheet | All Models |
