Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN

Name: Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN
Brand: Alfa
SKU: P-Q-AS3046D
Availability: InStock

Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN image 1

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The AS3046 is Alfa’s version of the CA3046 IC in an SOIC package. The AS3046D consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

The AS3046D is available in a 14-pin SOIC package.

Features

Matched pair of npn transistors
VBE matched less than ±1 mV
5 general purpose monolithic transistors
Wide operating current range

Applications

Filters
Custom designed differential amplifiers
Temperature compensated amplifiers

SKU:

P-Q-AS3046D

Item ID:

045570

UPC/EAN:

841358118852

ALFA RPAR Part Number:

AS3046D

Brand:

Alfa

Element:

Matched Pair:

Package:

Polarity:

Type:

BJT, Transistor Pair, Transistor Array, Transistors, Integrated Circuits

Accessory Items:

PCB - SMD to Thru-Hole Adapter, SOIC-14 to DIP-14

Max. Base to Emitter Voltage (IE = 1mA)			0.75 V
Max. Base to Emitter Voltage (IE = 10mA)			0.8 V
Max. Collector-Base Voltage, UCBO			50 V
Max. Collector-Current, IC			30 mA
Max. Collector-Emitter Voltage, UCEO			30 V
Max. Collector-Substrate Voltage, UCIO			50 V
Max. Collector Cutoff Current (VCE = 10V, IB = 0)			20 nA
Max. Emitter-Base Voltage, UEBO			5 V
Max. Power Dissipation for Total Package			500 mW
Max. Power Dissipation per Transistor			200 mW
Min. Collector to Base Breakdown Voltage			50 V
Min. Collector to Emitter Breakdown Voltage			30V
Min. Collector to Substrate Breakdown Voltage			50 V
Min. Input Offset Current for Matched Pair Q1 and Q2			0.02 uA
Min. Static Forward Current Transfer Ratio (VCB=0V, IC=1 mA)			150
Min. Static Forward Current Transfer Ratio (VCE=3V, IC=10mA)			150
Min. Static Forward Current Transfer Ratio (VCE=3V, IC=10μA)			140
Typ. Collector Cutoff Current (VCB = 10V, IE = 0)			0.002 nA
Typ. Collector to Emitter Saturation Voltage			0.1 V
Typ. Emitter to Base Breakdown Voltage			6.5 V
Typ. Magnitude of Input Offset Voltage for Differential Pair			0.5 mV
Typ. Magnitude of Input Offset Voltage for Isolated Transistors			0.5 mV